X‐ray photoelectron diffraction of (100)‐oriented chemical vapor deposited diamond films on silicon (100)
نویسندگان
چکیده
منابع مشابه
Piezoresistivity in vapor-deposited diamond films
We report the observation of a very large piezoresistive effect in both polycrystalline and homoepitaxial chemical-vapor-deposited diamond films. The gauge factor for polycrystalline p-type diamond at 500 microstrains was found to be only 6 at room ambient, but increased rapidly with temperature, exceeding that of polycrystalline silicon (30) at 35 ‘C, and that of single-crystal Si (120) at 50 ...
متن کاملDielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films
Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH4 gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin fil...
متن کاملChemical vapor deposition of HfO2 films on Si„100..
HfO2 films were grown on Si~100! by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ;400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor provides sufficient oxygen to produce a stoichiometric HfO2 film. Medium energy ion scattering, high resolution transmission electron micro...
متن کاملSingle nitrogen vacancy centers in chemical vapor deposited diamond nanocrystals.
Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was ...
متن کاملMicromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for s...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.114483